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IRFP264N, SiHFP264N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 34 94 Single
D
FEATURES
250 0.060
* * * * * * * *
Advanced Process Technology Dynamic dV/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-247
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer with an ectremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
G
S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP264NPbF SiHFP264N-E3 IRFP264N SiHFP264N
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 250 20 44 31 170 2.6 520 25 38 380 8.7 - 55 to + 175 300d 10 1.1 UNIT V
A W/C mJ A mJ W V/ns C lbf * in N*m
TC = 25 C
for 10 s 6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.7 mH, RG = 25 , IAS = 25 A, VGS = 10 V (see fig. 12). c. ISD 25 A, dI/dt 500 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91216 S-81274-Rev. A, 16-Jun-08 www.vishay.com 1
IRFP264N, SiHFP264N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.39 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 150 C VGS = 10 V ID = 25 Ab VDS = 25 V, ID = 25 Ab
250 2.0 29
0.30 -
4.0 100 25 250 0.060 -
V V/C V nA A S
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
3860 480 110 17 62 52 53 5.0 13
210 34 94 nH ns nC pF
VGS = 10 V
ID = 25 A, VDS = 200 V, see fig. 6 and 13
-
VDD = 30 V, ID = 25 A , RG = 1.8 , VGS = 10 V, see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
-
270 2.7
44 A 170 1.3 400 4.1 V ns C
G
S
TJ = 25 C, IS = 25 A, VGS = 0
Vb
-
TJ = 25 C, IF = 25 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.
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Document Number: 91216 S-81274-Rev. A, 16-Jun-08
IRFP264N, SiHFP264N
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TJ = 25 C
100
100
TJ = 175 C
10
10
4.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1000
TOP
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.0
ID = 42A
3.0
100
2.0
4.5V
10
1.0
1 1 10
20s PULSE WIDTH TJ = 175 C
100
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
TJ , Junction Temperature ( C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91216 S-81274-Rev. A, 16-Jun-08
www.vishay.com 3
IRFP264N, SiHFP264N
Vishay Siliconix
8000
6000
Coss = C + Cgd ds
Ciss
4000
ISD , Reverse Drain Current (A)
VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd
1000
C, Capacitance(pF)
100
TJ = 175 C
10
Coss
2000
Crss
1
TJ = 25 C V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0 1 10 100 1000
0.1 0.2
VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 25A VDS = 200V VDS = 125V VDS = 50V
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
16
100
12
100sec 10 1msec
8
1 Tc = 25C Tj = 175C Single Pulse 1 10 100
10msec
4
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
0.1
1000
10000
QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area
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Document Number: 91216 S-81274-Rev. A, 16-Jun-08
IRFP264N, SiHFP264N
Vishay Siliconix
RD
50
VGS RG
VDS
D.U.T. + - VDD
40
ID , Drain Current (A)
10 V
30
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
20
VDS
10
90 %
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 % VGS td(on) tr td(off) tf
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS tp
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
IAS
Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91216 S-81274-Rev. A, 16-Jun-08
Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5
IRFP264N, SiHFP264N
Vishay Siliconix
1000
EAS , Single Pulse Avalanche Energy (mJ)
TOP
800
BOTTOM
ID 10A 18A 25A
600
400
200
0 25 50 75 100 125 150 175
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Starting TJ , Junction Temperature ( C)
Current regulator Same type as D.U.T.
50 k 12 V 0.2 F 0.3 F
VGS QGS
QG
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91216 S-81274-Rev. A, 16-Jun-08
IRFP264N, SiHFP264N
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by R G Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91216.
Document Number: 91216 S-81274-Rev. A, 16-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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